Reaction-diffusion phenomena govern failure in many engineering applications including microelectronics. Examples of such failure include void formation in Cu interconnects under electromigration and excessive brittle intermetallic compound (IMC) growth in solder microbumps. Modeling such complex interactions requires accurately capturing evolving phase interfaces driven by electrical, thermal and mechanical forces. In this work, we present a sharp-interface alternative to phase field and level set approaches that simplify the enforcement of boundary conditions at the interface, the governing equations, and improve computational efficiency. In the study, we use an Enriched Isogeometric Analysis (EIGA) framework that utilizes parametric spline representations for explicit interface tracking and for strong imposition of boundary conditions. The efficacy of this approach is demonstrated through the simulations of electromigration-induced voiding in Cu interconnects and IMC growth in solder microbumps. The simulation results are validated against experimental data, showcasing the potential of EIGA for moving interface and phase evolution problems.